Premium
Improved hole distribution in InGaN/GaN dual‐wavelength light‐emitting diodes with Mg‐doped quantum‐wells
Author(s) -
Si Zhao,
Wei Tongbo,
Yan Jianchang,
Ma Jun,
Zhang Ning,
Liu Zhe,
Wei Xuecheng,
Wang Xiaodong,
Lu Hongxi,
Wang Junxi,
Li Jinmin
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228777
Subject(s) - light emitting diode , optoelectronics , materials science , doping , voltage droop , electroluminescence , diode , quantum well , wavelength , quantum efficiency , optics , power (physics) , laser , physics , nanotechnology , layer (electronics) , quantum mechanics , voltage divider
A study on the effect of Mg doping in quantum‐well (QW) layers on dual‐wavelength light‐emitting diodes (LEDs) was performed. A series of dual‐wavelength LEDs with different Mg doping conditions were fabricated. According to electroluminescence measurement, as the Mg doping concentration and regions varied, improved hole distribution and bottom‐QW emission was achieved. This result is in accord with APSYS simulation. In addition, the sample with Mg doping in all QWs showed the highest output power and smallest efficiency droop. It is concluded that Mg doping in QWs could ameliorate the optical and electrical properties of dual‐wavelength LEDs.