Premium
Advantages of blue In G a N light‐emitting diodes with composition‐graded barriers and electron‐blocking layer
Author(s) -
Chang JihYuan,
Kuo YenKuang
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228764
Subject(s) - light emitting diode , blocking (statistics) , optoelectronics , diode , composition (language) , materials science , layer (electronics) , electron , blue light , quantum efficiency , nanotechnology , physics , computer science , computer network , linguistics , philosophy , quantum mechanics
Blue InGaN light‐emitting diodes (LEDs) with composition‐graded barriers and composition‐garded electron‐blocking layer (EBL) are studied theoretically. Simulation results show that the employment of composition‐graded barriers and compositon‐graded EBL simultaneously can benefit from the enhanced hole‐injection efficiency and more uniform carrier distribution among the quantum wells. Moreover, the optical and electrical properties of the InGaN blue LEDs are markedly promoted. The graded barriers are investigated systematically in an attempt to obtain the optimal situation.