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Radial n–i–p structure silicon nanowire‐based solar cells on flexible stainless steel substrates
Author(s) -
Xie Xiaobing,
Zeng Xiangbo,
Yang Ping,
Li Hao,
Li Jingyan,
Zhang Xiaodong,
Wang Qiming
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228595
Subject(s) - plasma enhanced chemical vapor deposition , materials science , silicon , quantum efficiency , planar , optoelectronics , short circuit , energy conversion efficiency , open circuit voltage , solar cell , wavelength , quantum dot solar cell , chemical vapor deposition , thin film , silicon nanowires , polymer solar cell , voltage , nanotechnology , electrical engineering , computer graphics (images) , computer science , engineering
Radial n–i–p structure silicon nanowires‐(SiNWs) based solar cells on flexible stainless steel substrates have been fabricated by plasma‐enhanced chemical vapor deposition (PECVD). The highest open‐circuit voltage ( V oc ) and short‐circuit current density ( J sc ) for AM 1.5 illumination were 0.62 V and 13.36 mA cm −2 , respectively, at a maximum power conversion efficiency of 3.56%. The optical reflectance of the SiNWs solar cells over a broad rang of wavelengths (300–1000 nm) is reduced by ∼80% in average compared to planar silicon thin film cells. The external quantum efficiency (EQE) measurements show that the EQE response of SiNWs solar cells is improved greatly in the wavelength range of 550–750 nm compared to corresponding planar silicon thin film solar cells.