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Electrical characterization of liquid‐phase‐deposited Si ON on ( NH 4 ) 2 S ‐treated Ga A s
Author(s) -
Yen ChihFeng,
Lee JungChan,
Cheng ChiHsuan,
Lee MingKwei
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228592
Subject(s) - boric acid , dielectric , materials science , sulfide , analytical chemistry (journal) , silicon , substrate (aquarium) , gallium arsenide , ammonia , aqueous solution , ammonium , inorganic chemistry , chemistry , optoelectronics , metallurgy , chromatography , organic chemistry , oceanography , geology
The electrical characteristics of liquid‐phase‐deposited (LPD) silicon oxynitride film on ammonium‐sulfide‐treated p‐type (100) gallium arsenide (GaAs) substrate were investigated. Hydrofluosilicic acid, ammonia, and boric acid aqueous solutions were used as precursors. The electrical characteristics of silicon oxynitride film are a function of the boric acid volume in the growth solution and much improved on GaAs substrate with ammonium‐sulfide treatment. The leakage currents can reach 1.24 × 10 −7 and 7.85 × 10 −7 A cm −2 at ±0.5 MV cm −1 . The lowest interface state density and the dielectric constant are 3.32 × 10 11 cm −2 eV −1 and 4.74, respectively.