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Multiple exciton generation in PbSe and PbS nanocrystals incorporated into amorphous silicon p–n junction
Author(s) -
Krivoshlykov Sergei G.
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228575
Subject(s) - multiple exciton generation , exciton , photocurrent , materials science , nanocrystal , optoelectronics , lead sulfide , lead selenide , cadmium selenide , amorphous silicon , quantum dot solar cell , semiconductor , band gap , silicon , quantum dot , energy conversion efficiency , amorphous solid , nanotechnology , crystalline silicon , chemistry , monocrystalline silicon , condensed matter physics , physics , crystallography
The effect of multiple exciton generation in semiconductor nanocrystals suggesting the possibility of efficient conversion of each absorbed high‐energy photon into at least two electron–hole pairs (excitons) is demonstrated in the photocurrent from lead selenide (PbSe) and lead sulfide (PbS) colloidal nanocrystals incorporated into amorphous silicon p–n junction. It is shown that employment of this effect for increasing efficiency of solar cells requires such energy bandgap alignment in the system that ensures confinement of the photogenerated charge carriers inside the nanocrystal layer.