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Ultralow electron mobility of an individual Cu‐doped Zn O nanowire
Author(s) -
Jia Xiaokai,
Xu Hongjun,
Gao Jingyun,
Jia Xiaoning,
Zhu Huichao,
Yu Dapeng
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228531
Subject(s) - nanowire , materials science , doping , electron mobility , photoluminescence , electrical resistivity and conductivity , field effect transistor , chemical engineering , conductivity , nanotechnology , optoelectronics , transistor , chemistry , electrical engineering , engineering , voltage
In this work, we synthesized Cu‐doped ZnO nanowires through a vapor–liquid–solid process. We investigated their composition and photoluminescence properties; and we found the Cu‐doped ZnO nanowires have a c ‐axis preferential growth direction, uniform Cu distribution and a characteristic spectrum. We further investigated their electrical property by fabricating a simple field effect transistor based on an individual C‐shaped Cu‐doped ZnO nanowire. The electrical studies reveal that the Cu‐doped ZnO nanowire has n‐type conductivity and ultralow electron mobility.