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Self‐sufficient minority carrier lifetime in silicon from quasi‐steady‐state photoluminescence
Author(s) -
Giesecke J. A.,
Schubert M. C.,
Warta W.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228383
Subject(s) - photoluminescence , carrier lifetime , dopant , silicon , a priori and a posteriori , materials science , steady state (chemistry) , optoelectronics , generalization , radiative transfer , state (computer science) , computational physics , computer science , doping , optics , physics , chemistry , algorithm , mathematics , mathematical analysis , philosophy , epistemology
Abstract Quasi‐steady‐state photoluminescence is a versatile technique to determine carrier lifetime in silicon. A recent approach extracts carrier lifetime without a priori information about dopant concentration [Appl. Phys. Lett. 97 , 092109 (2010)]. It utilizes the phase shift between a time‐modulated optical irradiation and the radiative recombination of a sample, while requiring a minimum of two measurements. The present paper is aimed at a generalization thereof that requires only one measurement. It brings about a substantial experimental simplification, significantly improved accuracy and precision, and it opens up paths to access material properties other than lifetime.