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Effect of substrate bias on the properties of microcrystalline silicon films deposited by hot‐wire chemical vapor deposition
Author(s) -
Zhang Lei,
Shen Honglie,
You Jiayi
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228342
Subject(s) - materials science , substrate (aquarium) , crystallinity , chemical vapor deposition , raman spectroscopy , silicon , microcrystalline , thin film , scanning electron microscope , boron , analytical chemistry (journal) , composite material , optoelectronics , optics , nanotechnology , crystallography , chemistry , oceanography , physics , organic chemistry , chromatography , geology
Abstract Microcrystalline silicon thin films were deposited on glass and stainless steel (SS) substrates by hot‐wire chemical vapor deposition with negative substrate bias varying from 0 to −600 V. The structural properties of these films were characterized by X‐ray diffraction, Raman spectroscopy, Fourier transform infrared spectra, and scanning electron microscopy. The results show that the crystallinity and compactness of the films deposited on glass first improved by increasing the substrate bias from 0 to −300 V, and then deteriorated by further elevating the substrate bias from −300 to −600 V. However, the crystallinity of films deposited on SS with negative substrate bias deteriorated on increasing the applied substrate bias. Moreover, temperature‐dependent conductivity measurements were performed to investigate the electrical properties of the boron‐doped films on glass. The conductivity activation energy of the boron‐doped films deposited on glass first decreased from 0.049 to 0.039 eV by varying the substrate bias from 0 to −300 V, and then increased to 0.05 eV on increasing the substrate bias to −600 V.