Atomic‐layer‐deposited ZnO thin‐film transistors with various gate dielectrics | Zendy

Yang Jaehyun | Zendy; Park Joong Keun | Zendy; Kim Sunkook | Zendy; Choi Woong | Zendy; Lee Sangyoon | Zendy; Kim Hyoungsub | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Atomic‐layer‐deposited ZnO thin‐film transistors with various gate dielectrics

Author(s) -

Yang Jaehyun,

Park Joong Keun,

Kim Sunkook,

Choi Woong,

Lee Sangyoon,

Kim Hyoungsub

Publication year - 2012

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201228303

Subject(s) - materials science , dielectric , thin film transistor , gate dielectric , optoelectronics , crystallinity , amorphous solid , atomic layer deposition , surface roughness , layer (electronics) , transistor , subthreshold swing , field effect transistor , nanotechnology , composite material , crystallography , electrical engineering , chemistry , engineering , voltage

We have investigated the effects of gate dielectric layers having different microstructures on the crystallographic properties and device performances of atomic‐layer‐deposited (ALD) ZnO thin‐film transistors (TFTs) in a bottom‐gated structure. Among three gate dielectric materials (thermally grown SiO 2 , ALD‐HfO 2 , and ALD‐Al 2 O 3 ), the ALD‐ZnO layer on Al 2 O 3 exhibited the best crystallinity and surface morphology due to the excellent surface roughness and/or hydrophilic surface polarity of the amorphous Al 2 O 3 layer. As a result, it showed the best TFT performance, including field‐effect mobility (∼3.9 cm 2 /Vs), subthreshold swing (∼1.35 V/decade), and on/off ratio (∼5 × 10 7 ).

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research