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Atomic‐layer‐deposited ZnO thin‐film transistors with various gate dielectrics
Author(s) -
Yang Jaehyun,
Park Joong Keun,
Kim Sunkook,
Choi Woong,
Lee Sangyoon,
Kim Hyoungsub
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228303
Subject(s) - materials science , dielectric , thin film transistor , gate dielectric , optoelectronics , crystallinity , amorphous solid , atomic layer deposition , surface roughness , layer (electronics) , transistor , subthreshold swing , field effect transistor , nanotechnology , composite material , crystallography , electrical engineering , chemistry , engineering , voltage
We have investigated the effects of gate dielectric layers having different microstructures on the crystallographic properties and device performances of atomic‐layer‐deposited (ALD) ZnO thin‐film transistors (TFTs) in a bottom‐gated structure. Among three gate dielectric materials (thermally grown SiO 2 , ALD‐HfO 2 , and ALD‐Al 2 O 3 ), the ALD‐ZnO layer on Al 2 O 3 exhibited the best crystallinity and surface morphology due to the excellent surface roughness and/or hydrophilic surface polarity of the amorphous Al 2 O 3 layer. As a result, it showed the best TFT performance, including field‐effect mobility (∼3.9 cm 2 /Vs), subthreshold swing (∼1.35 V/decade), and on/off ratio (∼5 × 10 7 ).