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Advantages of near‐ultraviolet light‐emitting diodes with polarization‐matched InGaN/AlGaInN multi‐quantum wells
Author(s) -
Kuo YenKuang,
Chen YuHan,
Chang JihYuan,
Tsai MiaoChan
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228274
Subject(s) - optoelectronics , voltage droop , quantum well , auger effect , light emitting diode , materials science , diode , ultraviolet , polarization (electrochemistry) , carrier generation and recombination , wide bandgap semiconductor , electron , optics , physics , semiconductor , laser , chemistry , power (physics) , quantum mechanics , voltage divider
Advantages of near‐ultraviolet light‐emitting diodes with polarization‐matched InGaN/AlGaInN multi‐quantum wells (QWs) are investigated numerically. Simulation results show that, the polarization‐matched structure possesses improved efficiency droop and higher output power under high current injection due to better overlap of electron‐hole wavefunctions and slighter Auger recombination. The optical performance of the polarization‐matched structure can benefit from the enhanced capability of carrier confinement with the employment of larger bandgap electron‐blocking layer and wider QWs.