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Temperature and injection current dependent optical and thermal characteristics of In G a N ‐based green large‐area light‐emitting diodes
Author(s) -
Lee Soo Hyun,
Lee Hee Kwan,
Bae Sungbum,
Kim Jongbae,
Kim SungBock,
Yu Jae Su
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228256
Subject(s) - light emitting diode , materials science , junction temperature , optoelectronics , diode , thermal resistance , current (fluid) , voltage , sapphire , thermal management of high power leds , optical power , thermal , optics , physics , laser , quantum mechanics , meteorology , thermodynamics
Optical, spectral, and thermal characteristics of InGaN/GaN multiple quantum well green light‐emitting diodes (LEDs) with a large chip size of 0.8 × 1 mm 2 , operating at λ ∼ 525 nm, on patterned sapphire substrate (PSS) were studied. The temperature‐dependent optical and spectral properties of LEDs were measured and analyzed. The junction temperature ( T j ) was also determined by the forward voltage method, in comparison with the simulation results which were theoretically calculated by a three‐dimensional anisotropic heat dissipation model based on the finite element method. Under an injection current of 350 mA at 298 K, the optical output power and forward voltage were obtained to be 63.5 mW and 3.98 V, respectively. The characteristic temperature was found to be ∼438 K at an injection current of 350 mA. The T j was increased with increasing the injection current. From the measured T j values, the thermal resistance ( R th ) value was experimentally obtained to be ∼6.31 K W −1 , which was well consistent with the simulated result ( R th ∼ 6.24 K W −1 ).