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Interfacial doping for efficient charge injection in organic semiconductors
Author(s) -
Lee JaeHyun,
Kim JangJoo
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228199
Subject(s) - doping , organic semiconductor , materials science , oled , optoelectronics , organic solar cell , organic electronics , semiconductor , layer (electronics) , diode , electronics , fermi level , nanotechnology , chemistry , electrical engineering , polymer , composite material , voltage , electron , physics , transistor , engineering , quantum mechanics
Interfacial doping in organic semiconductors (OSs) is an important technique to achieve efficient organic electronic devices. In this paper, we discuss how the charge injection into an OS can be enhanced by the insertion of a thin interfacial layer or an electrically doped OS layer between an electrode and an undoped OS. We present that the vacuum level shift and Fermi level modification by the electrical doping is the origin of the efficient charge injection through a metal–organic junction and an organic–organic junction. Application to organic electronics such as organic light‐emitting diodes (OLEDs) and organic photovoltaics (OPVs) is briefly summarized.