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Resistive‐switching behavior and mechanism in copper‐nitride thin films prepared by DC magnetron sputtering
Author(s) -
Zhu Wei,
Zhang Xin,
Fu Xiaoniu,
Zhou Yongning,
Luo Shengyun,
Wu Xiaojing
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228175
Subject(s) - resistive random access memory , materials science , sputter deposition , optoelectronics , nitride , copper , resistive touchscreen , cavity magnetron , thin film , sputtering , pulsed dc , nanotechnology , voltage , electrical engineering , layer (electronics) , metallurgy , engineering
Abstract Resistive random access memory (RRAM) devices are made by copper nitride films prepared by DC magnetron sputtering. After a forming process, the Cu x N‐based RRAM devices show bipolar character with low operation voltage and distinguishable resistance ratio. The fitting results for the electrical measurements and the conducting atomic force microscope (CAFM) analysis indicate that resistive switching mechanism is consistent with the formation and rupture of conducting filaments. Simultaneously, the distribution of conducting filaments measured by CAFM reveals a promising potential to fabricate high‐density RRAM device by using this material. The mechanism of the formation of conducting filaments is discussed based on our results.