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High quality p‐type chemical vapor deposited {111}‐oriented diamonds: Growth and fabrication of related electrical devices
Author(s) -
Lazea Andrada,
Garino Yiuri,
Teraji Tokuyuki,
Koizumi Satoshi
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228162
Subject(s) - cathodoluminescence , chemical vapor deposition , diamond , materials science , hall effect , analytical chemistry (journal) , impurity , doping , boron , electron mobility , beryllium , luminescence , electrical resistivity and conductivity , optoelectronics , chemistry , metallurgy , engineering , organic chemistry , chromatography , electrical engineering
In this paper the quality of boron‐doped diamond films grown by microwave (MW) plasma activated chemical vapor deposition on high pressure high temperature synthetic type Ib {111}‐oriented diamond substrates is estimated from the correlations between low‐temperature cathodoluminescence analyses and Hall measurements. The layers attributes, obtained in the low methane concentration regime (0.05% [CH 4 ]/[H 2 ] ratio) and using low plasma powers (450–500 W), are completed by impurities incorporation investigations (secondary ion mass spectroscopy). Hall mobility values exceeding 550 cm 2 V −1 s −1 at room temperature and characteristic excitonic luminescence peaks were obtained, indicating towards the high crystalline quality of our {111}‐oriented diamond films. Based on these B‐doped samples, Schottky junctions were fabricated and analyzed, presenting the highest rectification ratio when compared with similar devices.