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Capacitance characterization of Ge 15 Sb 85 phase‐change thin films
Author(s) -
Qamhieh N.,
Mahmoud S. T.,
Ayesh A. I.,
Ghamlouche H.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228109
Subject(s) - capacitance , materials science , amorphous solid , analytical chemistry (journal) , nucleation , differential capacitance , thin film , activation energy , biasing , sputtering , phase transition , phase (matter) , condensed matter physics , voltage , chemistry , thermodynamics , electrical engineering , crystallography , nanotechnology , electrode , physics , chromatography , organic chemistry , engineering
The capacitance variation as a function of temperature and electric field for tellurium free Ge 15 Sb 85 thin films deposited by the DC sputtering technique is investigated. The capacitance measurements were performed for a sweep voltage from −20 to +20 V at different temperatures, and at a frequency of 100 kHz. The results show a slight increase in the capacitance with temperature and it reaches a maximum value around 80 °C. As the temperature increases, the capacitance decreases and eventually becomes negative at temperatures close to the amorphous‐crystalline transition temperature ( T C ). The sharp decrease in the capacitance can be attributed to the thermally activated conduction process with activation energy of 0.28 eV. Nonlinearity in the variation of capacitance with the applied bias voltage is observed at high temperatures close to T C . The phenomenon is explained in terms of the nucleation and growth process.