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Low interface state density and low leakage current of atomic‐layer deposited TiO 2 /Al 2 O 3 /sulfur‐treated GaAs
Author(s) -
Lee MingKwei,
Yen ChihFeng
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228093
Subject(s) - atomic layer deposition , dielectric , passivation , high κ dielectric , materials science , analytical chemistry (journal) , leakage (economics) , sulfur , capacitor , current density , layer (electronics) , chemistry , optoelectronics , nanotechnology , voltage , electrical engineering , metallurgy , engineering , chromatography , macroeconomics , physics , quantum mechanics , economics
The (NH 4 ) 2 S treatment can reduce native oxides and passivate GaAs. Atomic‐layer‐deposited (ALD‐Al 2 O 3 ) can further remove the residue native oxides by self‐cleaning. For the first time, native oxides can be sufficiently removed by the combination of (NH 4 ) 2 S treatment and ALD‐Al 2 O 3 . Stacked with high dielectric constant TiO 2 prepared by atomic‐layer deposition on a Al 2 O 3 /(NH 4 ) 2 S‐treated GaAs MOS capacitor, the leakage current densities can reach 1.9 × 10 −8 and 3.1 × 10 −6 A/cm 2 at ±2 MV/cm. The dielectric constant is 25 and the interface state density is about 2.4 × 10 11 cm −2 eV −1 .