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Optical and photoluminescence properties of BiFeO 3 thin films grown on ITO‐coated glass substrates by chemical solution deposition
Author(s) -
Chen Xinman,
Zhang Hu,
Wang Tao,
Wang Feifei,
Shi Wangzhou
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201228011
Subject(s) - photoluminescence , materials science , thin film , amorphous solid , bismuth ferrite , annealing (glass) , band gap , chemical bath deposition , optoelectronics , nanotechnology , composite material , crystallography , ferroelectricity , multiferroics , chemistry , dielectric
The optical and photoluminescence properties of the pure bismuth ferrite (BiFeO 3 ) thin films deposited on ITO‐coated glass substrates by chemical solution deposition methods were investigated. The optical bandgap of obtained BiFeO 3 thin films annealed at 500 and 600 °C were confirmed to be 2.75 and 2.71 eV, respectively. The dependence of bandgap on annealing was discussed in terms of coarsening grain sizes as well as the existence of amorphous phases in the films. Furthermore, the evident photoluminescence of BiFeO 3 thin films is observed. The near‐band‐edge emission located at 455.4 and 457.9 nm were identified for BiFeO 3 thin films annealed at 500 and 600 °C, respectively, while the identical defect emission at 468.7 and 492.3 nm were confirmed for both BiFeO 3 thin films, which were tentatively attributed to the defect states related with Bi 3+ level and oxygen deficiencies inside the bandgap. However, more investigations are needed to classify the origin of BiFeO 3 thin‐film emission for further application.