Influence of substrate resistivity on photovoltaic characteristics of Pd‐doped amorphous carbon film/SiO 2 /Si heterojunction | Zendy

Xue Qingzhong | Zendy; Wang Sheng | Zendy; Li Jianpeng | Zendy; Zhang Hongxin | Zendy; Jiao Zhiyong | Zendy

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Influence of substrate resistivity on photovoltaic characteristics of Pd‐doped amorphous carbon film/SiO 2 /Si heterojunction

Author(s) -

Xue Qingzhong,

Wang Sheng,

Li Jianpeng,

Zhang Hongxin,

Jiao Zhiyong

Publication year - 2012

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201228010

Subject(s) - materials science , heterojunction , electrical resistivity and conductivity , substrate (aquarium) , amorphous solid , doping , solar cell , optoelectronics , sputter deposition , layer (electronics) , current density , energy conversion efficiency , amorphous silicon , open circuit voltage , short circuit , photovoltaic system , thin film , sputtering , crystalline silicon , composite material , nanotechnology , voltage , chemistry , crystallography , electrical engineering , oceanography , physics , quantum mechanics , geology , engineering

The Pd‐doped amorphous carbon (a‐C:Pd) film was deposited on n‐Si substrates with a native SiO 2 layer to form a‐C:Pd film/SiO 2 /Si solar cell using a direct current magnetron sputtering method. We studied the effect of Si substrate resistivity on the photovoltaic characteristics of the a‐C:Pd film/SiO 2 /Si solar cell for the first time and found that the Si substrate resistivity has a marked effect on the photovoltaic characteristics of a‐C:Pd film/SiO 2 /Si heterojunctions. The heterojunction with n‐Si substrate resistivity of 2–3 Ω cm shows the highest open‐circuit voltage, short‐circuit current density, and conversion efficiency. A reasonable mechanism for the results is presented in this paper.

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