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Nucleation and epitaxial growth of Ge nanoislands on Si surface prepatterned by ion irradiation
Author(s) -
Smagina Zhanna,
Novikov Pavel,
Zinovyev Vladimir,
Stepitalya,
Dvurechenskii Anatoly,
Armbrister Vladislav,
Seleznev Vladimir,
Kuchinskaya Polina
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200906
Subject(s) - materials science , irradiation , nucleation , substrate (aquarium) , resist , etching (microfabrication) , ion , nanopillar , optoelectronics , nanotechnology , composite material , nanostructure , layer (electronics) , chemistry , oceanography , physics , organic chemistry , nuclear physics , geology
Experimental study of Ge nanoislands growth on groove‐patterned Si(001) substrate formed by ion‐beam‐assisted nanoimprint lithography is carried out. Prepatterning procedure includes ion irradiation of Si substrate through imprinted resist mask and subsequent selective etching of irradiated Si domains. It is shown that temperature during ion irradiation affects the location of subsequently grown Ge nanoislands. The effect is interpreted in terms of additional surface tensile strain formed inside grooves by residual irradiation‐induced defects. The effect is stronger for cold irradiated samples due to higher density of residual defects.