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Effective surface passivation of Si surfaces by chemical deposition of (Al 2 O 3 ) x (B 2 O 3 ) 1 − x thin layers
Author(s) -
Vitanov Petko,
Harizanova Antoaneta,
Ivanova Tatyana,
Perego Michele,
Stokkan Gaute,
Ulyashin Alexander
Publication year - 2013
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200749
Subject(s) - passivation , x ray photoelectron spectroscopy , thin film , materials science , scanning electron microscope , fourier transform infrared spectroscopy , dielectric , silicon , analytical chemistry (journal) , deposition (geology) , chemical engineering , nanotechnology , optoelectronics , layer (electronics) , chemistry , composite material , paleontology , chromatography , sediment , engineering , biology
In this work chemical liquid deposition from sol–gel solutions has been used to obtain thin (Al 2 O 3 ) x (B 2 O 3 ) 1 − x dielectric films. Passivation of Si surfaces using these films has been studied. Morphological properties of thin films deposited on polished Si surfaces have been investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM) technique. Their chemical composition, structural and optical features have been analysed by X‐ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and ultraviolet‐visible (UV–VIS) spectroscopy. Results, obtained in this work, show that silicon surfaces can be effectively passivated by thin dielectric layers deposited from chemical solutions. The thin dielectric layers developed in his work, can be recommended as back side passivation coating for Si‐based solar cells.