Premium
Electrical characterization of defects introduced in n‐Si during electron beam deposition of Pt
Author(s) -
Auret F. D.,
Coelho S. M. M.,
Nel J. M.,
Meyer W. E.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200578
Subject(s) - deep level transient spectroscopy , materials science , schottky diode , schottky barrier , irradiation , electron beam processing , epitaxy , analytical chemistry (journal) , optoelectronics , silicon , chemistry , nanotechnology , diode , layer (electronics) , physics , chromatography , nuclear physics
We have used deep level transient spectroscopy (DLTS) and high resolution DLTS to characterize the defects introduced in epitaxially grown n‐type, P‐doped, Si during electron beam deposition (EBD) of Pt for Schottky contact formation. The identity of some of these defects could be established by comparing their properties to those of well‐known defects introduced by high energy electron irradiation of the same material. The most prominent EBD‐induced defects thus identified were the E‐center (VP center), the A‐center (VO center), interstitial carbon (C i ), and the interstitial carbon–substitutional carbon (C i C s ) pair. EBD also introduced some defects that were not observed after high energy electron irradiation. DLTS depth profiling revealed that the main defects, VO and VP, could be detected up to 0.5 µm below the metal–Si interface. Shielding the sample from particles originating in the region of the electron beam significantly reduced defect introduction and resulted in Schottky contacts with improved rectification properties. Finally, we have found that exposing the sample to EBD conditions, without actually depositing metal, introduced a different set of electron traps, not introduced by the EBD process.