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Dislocation motion in Sb‐doped SiGe on Si substrate
Author(s) -
Yamashita Yoshifumi,
Matsunaga Takuya,
Funaki Toru,
Fushimi Tatsuya,
Kamiura Yoichi
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200208
Subject(s) - dislocation , doping , materials science , impurity , substrate (aquarium) , antimony , fermi level , condensed matter physics , activation energy , analytical chemistry (journal) , boron , optoelectronics , chemistry , metallurgy , composite material , physics , oceanography , organic chemistry , chromatography , quantum mechanics , geology , electron
We have successfully grown antimony‐doped Si 1− x Ge x epi‐films with different doping level and a boron‐doped one on Si (001) substrate. Using these samples, we have investigated the effect of these impurities in Si 1− x Ge x epifilm on dislocation velocity. Although dislocation velocities in the B‐doped SiGe film were comparable to those in the undoped one because of the low concentration of B, those in Sb‐doped samples are remarkably enhanced, which is qualitatively similar to the effects in bulk Si. The reduction of the activation energy of dislocation motion depended on the doping level of Sb and the amount of the reduction was 1.0 eV in the highest Sb‐concentration film. This value is significantly larger than those reported in bulk Si. The velocities in the lowest Sb‐concentration samples are also enhanced though the samples are thought to be electrically intrinsic at the temperatures where dislocation velocities were measured. Therefore, the large activation energy reduction is possibly attributed to multiple effects of the Fermi level change and other characteristic effects of the SiGe epifilm.