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Light induced degradation in B doped Cz‐Si solar cells
Author(s) -
Carvalho Alexandra,
Santos Paulo,
Coutinho José,
Jones Robert,
Rayson Mark J.,
Briddon Patrick R.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200196
Subject(s) - boron , degradation (telecommunications) , doping , oxygen , dimer , materials science , energy (signal processing) , crystallography , chemistry , photochemistry , optoelectronics , physics , telecommunications , organic chemistry , computer science , quantum mechanics
We analyse the formation energy of interstitial boron (B i ) and the properties of the defect resulting from its association with an oxygen dimer (B i O 2i ) to evaluate the possibility that it may be the slow‐forming centre responsible for the light‐induced degradation of B‐doped Si solar cells. However, we find that the formation energy of B i is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of B i O 2i is a shallow donor, and the deep donor form is high in energy.Lowest energy structure of the B i O 2i defect.