Light induced degradation in B doped Cz‐Si solar cells

We analyse the formation energy of interstitial boron (B i ) and the properties of the defect resulting from its association with an oxygen dimer (B i O 2i ) to evaluate the possibility that it may be the slow‐forming centre responsible for the light‐induced degradation of B‐doped Si solar cells. However, we find that the formation energy of B i is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of B i O 2i is a shallow donor, and the deep donor form is high in energy.Lowest energy structure of the B i O 2i defect.