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A re‐examination of cobalt‐related defects in n‐ and p‐type silicon
Author(s) -
Scheffler Leopold,
Kolkovsky Vladimir,
Weber Jörg
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200140
Subject(s) - deep level transient spectroscopy , cobalt , annealing (glass) , silicon , materials science , doping , analytical chemistry (journal) , hydrogen , crystallography , chemistry , optoelectronics , metallurgy , organic chemistry , chromatography
Abstract In the present work cobalt‐doped n‐ and p‐type silicon samples were studied by means of deep level transient spectroscopy (DLTS) and Laplace‐DLTS (LDLTS). We demonstrate that two dominant DLTS peaks previously assigned to a substitutional Co defect have different annealing behaviour and therefore belong to different defects. After wet chemical etching three other peaks (E90, E140 and H160) were observed in the samples. The intensity of the peaks becomes larger in the H‐plasma treated samples. This together with depth profiling demonstrates that the peaks are hydrogen‐related defects. The origin of the peaks will be discussed.