Homoepitaxial boron‐doped diamond with very low compensation | Zendy

Barjon J. | Zendy; Chikoidze E. | Zendy; Jomard F. | Zendy; Dumont Y. | Zendy; PinaultThaury M.A. | Zendy; Issaoui R. | Zendy; Brinza O. | Zendy; Achard J. | Zendy; Silva F. | Zendy

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Homoepitaxial boron‐doped diamond with very low compensation

Author(s) -

Barjon J.,

Chikoidze E.,

Jomard F.,

Dumont Y.,

PinaultThaury M.A.,

Issaoui R.,

Brinza O.,

Achard J.,

Silva F.

Publication year - 2012

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201200136

Subject(s) - diamond , chemical vapor deposition , boron , hall effect , activation energy , electrical resistivity and conductivity , doping , materials science , analytical chemistry (journal) , atmospheric temperature range , ionization energy , ionization , optoelectronics , chemistry , thermodynamics , ion , metallurgy , physics , organic chemistry , engineering , chromatography , electrical engineering

Homoepitaxial boron‐doped diamond layers grown by chemical vapor deposition on (100)‐oriented substrates are studied by Hall effect and resistivity measurements as a function of the temperature. In the range of 140–600 K, the hole concentration is well described by the neutrality equation in the regime of very low compensation, with the characteristic E i /2 activation energy, where E i is the ionization energy of boron acceptors. It indicates that the residual donor concentration is extremely low in the layers (<10 13 cm −3 ).

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