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Homoepitaxial boron‐doped diamond with very low compensation
Author(s) -
Barjon J.,
Chikoidze E.,
Jomard F.,
Dumont Y.,
PinaultThaury M.A.,
Issaoui R.,
Brinza O.,
Achard J.,
Silva F.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200136
Subject(s) - diamond , chemical vapor deposition , boron , hall effect , activation energy , electrical resistivity and conductivity , doping , materials science , analytical chemistry (journal) , atmospheric temperature range , ionization energy , ionization , optoelectronics , chemistry , thermodynamics , ion , metallurgy , physics , organic chemistry , engineering , chromatography , electrical engineering
Homoepitaxial boron‐doped diamond layers grown by chemical vapor deposition on (100)‐oriented substrates are studied by Hall effect and resistivity measurements as a function of the temperature. In the range of 140–600 K, the hole concentration is well described by the neutrality equation in the regime of very low compensation, with the characteristic E i /2 activation energy, where E i is the ionization energy of boron acceptors. It indicates that the residual donor concentration is extremely low in the layers (<10 13 cm −3 ).