Premium
Deep level studies in high‐temperature annealed silicon wafers for layer transfer in thin‐film solar cells
Author(s) -
Simoen Eddy,
Depauw Valerie,
Gordon Ivan,
Poortmans Jef
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200062
Subject(s) - materials science , wafer , annealing (glass) , deep level transient spectroscopy , optoelectronics , silicon , doping , conduction band , impurity , schottky barrier , schottky diode , electron , chemistry , composite material , physics , organic chemistry , quantum mechanics , diode
Deep‐level transient spectroscopy (DLTS) has been applied to high‐temperature annealed n‐ and p‐type Si wafers. The aim is to identify the deep levels responsible for the observed minority carrier lifetime degradation after thin‐film transfer to a glass substrate. Anneals have been performed at 1150 °C in H 2 or Ar. Care has been taken to avoid radiation defect formation during the fabrication of the Al Schottky barriers used for DLTS. It is shown that besides a change in the carrier doping density and profile, an annealing‐induced electron trap at 0.43 eV below the conduction band edge can be found, which is related to a vacancy–impurity complex.