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Nonlinear behavior of current‐dependent emission for diamond light‐emitting diodes
Author(s) -
Makino Toshiharu,
Kanno Shokichi,
Yamasaki Satoshi,
Kato Hiromitsu,
Okushi Hideyo
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201200047
Subject(s) - diamond , light emitting diode , sublinear function , diode , optoelectronics , trapping , materials science , current (fluid) , dielectric , spontaneous emission , impurity , optics , physics , quantum mechanics , mathematical analysis , ecology , laser , mathematics , composite material , biology , thermodynamics
Nonlinear emission characteristics of (111)‐oriented diamond p–i–n junction light‐emitting diodes (LEDs) were investigated. We measured the superlinear increase of excitonic emission and sublinear increase of deep‐level emission due to defects and/or impurity centers depending on injected current at room temperature (RT). These characteristics could not be explained by conventional carrier trapping and recombination processes at deep levels based on simple Shockley–Read–Hall statistics. We introduced three‐step processes of carrier trapping and recombination at charged deep levels via bound states, where the bound states are stable even at RT because of low dielectric constant in diamond. Rate equation analysis based on this concept simultaneously explained the superlinear increase of excitonic emission and sublinear increase of deep‐level emission for diamond LEDs.