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Back Cover: Piezoelectric MEMS generator based on the bulk PZT/silicon wafer bonding technique (Phys. Status Solidi A 12/2011)
Author(s) -
Tang Gang,
Liu Jingquan,
Liu Hesheng,
Li Yigui,
Yang Chunsheng,
He Dang,
DzungDao Viet,
Tanaka Katsuhiko,
Sugiyama Susumu
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201190040
Subject(s) - materials science , microelectromechanical systems , lapping , piezoelectricity , wafer , epoxy , composite material , adhesive , silicon , layer (electronics) , optoelectronics , wafer bonding
As shown by Tang et al. ( pp. 2913‐2919 ), a Pb(Zr,Ti)O 3 (PZT) thick film with excellent properties can be fabricated by lapping bulk PZT after bonding it to a silicon wafer at 105 °C by employing epoxy resin with preferable thermostability as the intermediate adhesive layer. Based on this technique, a piezoelectric generator for micro‐electro‐mechanical systems (MEMS) technology was fabricated and its performance was tested. The results show that the new thick‐film preparation method is compatible with MEMS technology and the PZT thick film retains the excellent performance of bulk PZT. This method provides a new way for the preparation of high performance piezoelectric MEMS energy harvesting elements.