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Inside Back Cover: The properties of sol–gel processed indium‐doped zinc oxide semiconductor film and its application in organic solar cells (Phys. Status Solidi A 11/2011)
Author(s) -
Kyaw A. K. K.,
Wang Y.,
Zhao D. W.,
Huang Z. H.,
Zeng X. T.,
Sun X. W.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201190036
Subject(s) - materials science , indium , doping , heterojunction , electrical resistivity and conductivity , optoelectronics , layer (electronics) , buffer (optical fiber) , solar cell , zinc , semiconductor , oxide , nanotechnology , metallurgy , electrical engineering , engineering
Kyaw et al. ( pp. 2635‐2642 ) fabricated indium‐doped zinc oxide (IZO) semiconductor films by a sol‐gel process and studied the influence of doping concentration and relative humidity on the properties of these films. Furthermore, the IZO films were demonstrated as buffer layer in inverted organic solar cells to exclusively collect electrons from the bulk heterojunction. The resistivity of a buffer layer must not be too high or low: with a high‐resistivity buffer (e.g. undoped sol‐gel ZnO), the efficiency of the solar cell is lowered; and if the resistivity of the buffer is too low, it will cause short‐circuit to the solar cell. The image on the right shows an atomic force microscopy (AFM) image of IZO film while the left one illustrates the device architecture and current‐voltage characteristics of the cells with and without buffer layers.