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Back Cover: Towards experimental identification of vacancy complexes in InN (Phys. Status Solidi A 7/2011)
Author(s) -
Rauch Christian,
Makkonen Ilja,
Tuomisto Filip
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201190023
Subject(s) - vacancy defect , positron annihilation , positron annihilation spectroscopy , annihilation , crystallographic defect , materials science , characterization (materials science) , identification (biology) , cover (algebra) , semiconductor , condensed matter physics , engineering physics , positron , nanotechnology , optoelectronics , physics , nuclear physics , engineering , mechanical engineering , botany , biology , electron
With increasing availability of high‐quality indium nitride epilayers, intrinsic point defects become more important in determining the material's properties – and appropriate tools for their detection and characterization have to be developed. Positron annihilation spectroscopy offers the unique opportunity of selectively studying vacancy‐type defects in semiconductors. When combined with careful ab‐initio calculations, the determination of the chemical identity of dominant open‐volume defects is possible. In their article on pp. 1548–1550 , Rauch et al. present a comprehensive computational study of positron states and annihilation in InN which opens the way to experimental identification of vacancy complexes in InN.