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Inside Back Cover: Single‐photon detection by Si single‐electron FETs (Phys. Status Solidi A 3/2011)
Author(s) -
Tabe Michiharu,
Udhiarto Arief,
Moraru Daniel,
Mizuno Takeshi
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201190008
Subject(s) - quantum dot , optoelectronics , electron , trapping , dopant , quantum tunnelling , transistor , photon , materials science , charge (physics) , kelvin probe force microscope , physics , nanotechnology , optics , doping , voltage , quantum mechanics , ecology , atomic force microscopy , biology
The article by Michiharu Tabe et al. ( pp. 646–651 ) describes the detection of photo‐generated charge trapping by single‐electron fieldeffect transistors. Two types of devices are investigated, depending on the nature of the quantum dots mediating the single‐electron tunneling current. One device consists of a multi‐dot array formed by a lithographic technique. When light is illuminated onto the channel, charges can be trapped in the dots, affecting the conduction path and giving rise to a random telegraph signal in the current. Another device consists of quantum dots naturally formed by ionized donors. Photogenerated charge trapping can be detected by a single‐electron current flowing via individual donors. For detecting the dopants in devices under operation, the authors employ a technique of low‐temperature Kelvin probe force microscopy, with results described in the latter part of the article. These results open a door for applications that combine individual photons and dopants.