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Back Cover: Novel multifunctional materials based on oxide thin films and artificial heteroepitaxial multilayers (Phys. Status Solidi A 2/2011)
Author(s) -
Opel Matthias,
Geprägs Stephan,
Menzel Edwin P.,
Nielsen Andrea,
Reisinger Daniel,
Nielsen KarlWilhelm,
Brandlmaier Andreas,
Czeschka Franz D.,
Althammer Matthias,
Weiler Mathias,
Goennenwein Sebastian T. B.,
Simon Jürgen,
Svete Matthias,
Yu Wentao,
Hühne SvenMartin,
Mader Werner,
Gross Rudolf
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201190005
Subject(s) - heterojunction , materials science , multiferroics , ferroelectricity , ferromagnetism , dielectric , molecular beam epitaxy , thin film , semiconductor , optoelectronics , nanotechnology , epitaxy , condensed matter physics , layer (electronics) , physics
The combination of magnetic properties with dielectric, semiconducting, or ferroelectric materials in one and the same material [e.g. magnetic semiconductors (MS) or intrinsic multiferroics] – as well as in artificial heterostructures [e.g. ferromagnetic/dielectric heterostructures for magnetic tunnel junctions (MTJs) or artificial multiferroic heterostructures] allows for the design of materials with novel functionalities and provides the basis for various device applications. In their Feature Article on pp. 232–251 , Opel et al. report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin films and artificial heterostructures using laser molecular beam epitaxy. They discuss the fabrication and characterization of oxide‐based ferromagnetic tunnel junctions, transition metal‐doped semiconductors, intrinsic multiferroics, and artificial ferroelectric/ferromagetic heterostructures.