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Inside Back Cover: In x Ga 1− x As quantum wire network‐like and ordered checker board‐like nanostructures on GaAs (311) by low In composition multi‐layer stacking (Phys. Status Solidi A 1/2011)
Author(s) -
Lee Jihoon,
Wang Zhiming,
Yazdanpanah V.,
Kim EunSoo,
Koo SangMo,
Salamo Gregory J.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201190001
Subject(s) - optoelectronics , materials science , stacking , indium , cover (algebra) , diode , gallium arsenide , quantum well , nanostructure , quantum wire , indium gallium arsenide , ribbon , layer (electronics) , laser , quantum , physics , nanotechnology , optics , mechanical engineering , nuclear magnetic resonance , quantum mechanics , engineering , composite material
Due to their interesting nature of self‐assembly and exhibited quantum confinement, low‐dimensional strained In x Ga 1−x As quantum structures on high‐index GaAs have gained significant research attention. Optoelectronic device applications as light emitting diodes, amplifiers, solar cells, laser, and detectors have been demonstrated. Especially, GaAs (311) is offering ample opportunities. Jihoon Lee et al. ( pp. 47–51 ) present an attempt to fabricate unique quantum wire (QWR) network‐like nanostructures (QWRNNs) and ordered checker board‐like nanostructures (OCBNs) on GaAs (311)A and (311) B by applying a low indium composition multiple‐layer stacking technique. Under a same growth condition, QWRNNs were demonstrated on GaAs (311)A (the larger cover image) while OCBNs were fabricated on GaAs (311)B (smaller image) as a result of strain accumulation and transfer through the multiple layers stacked.