Tuning the shape and damage in ion‐beam induced ripples on silicon | Zendy

Biermanns Andreas | Zendy; Hanisch Antje | Zendy; Grenzer Jörg | Zendy; Metzger Till Hartmut | Zendy; Pietsch Ullrich | Zendy

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Tuning the shape and damage in ion‐beam induced ripples on silicon

Author(s) -

Biermanns Andreas,

Hanisch Antje,

Grenzer Jörg,

Metzger Till Hartmut,

Pietsch Ullrich

Publication year - 2011

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201184269

Subject(s) - ripple , ion , irradiation , silicon , materials science , ion beam , diffraction , angle of incidence (optics) , kinetic energy , beam (structure) , scattering , optics , acceptance angle , atomic physics , ion beam mixing , highly charged ion , ion beam deposition , optoelectronics , chemistry , physics , ion source , nuclear physics , organic chemistry , quantum mechanics , voltage

We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe + ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X‐ray diffraction, small angle scattering and X‐ray reflectivity, we show that during ion irradiation with 70° off‐normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65° angle of incidence, the ripple amplitude grows.

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