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Tuning the shape and damage in ion‐beam induced ripples on silicon
Author(s) -
Biermanns Andreas,
Hanisch Antje,
Grenzer Jörg,
Metzger Till Hartmut,
Pietsch Ullrich
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201184269
Subject(s) - ripple , ion , irradiation , silicon , materials science , ion beam , diffraction , angle of incidence (optics) , kinetic energy , beam (structure) , scattering , optics , acceptance angle , atomic physics , ion beam mixing , highly charged ion , ion beam deposition , optoelectronics , chemistry , physics , ion source , nuclear physics , organic chemistry , quantum mechanics , voltage
We investigate the influence of ion beam parameters on the ripple formation on Si(001) surfaces after bombardment with Xe + ions of 25 keV kinetic energy using a scanning ion beam system. By combining grazing incidence X‐ray diffraction, small angle scattering and X‐ray reflectivity, we show that during ion irradiation with 70° off‐normal angle of incidence, changing the size of the irradiated area leads to an increased number of defects at the interface towards crystalline material. At 65° angle of incidence, the ripple amplitude grows.