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Influence of implantation conditions of He + ions on the structure of a damaged layer in GaAs(001)
Author(s) -
Shcherbachev Kirill,
Bailey Melanie J.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201184259
Subject(s) - materials science , layer (electronics) , ion , scanning electron microscope , substrate (aquarium) , diffusion , irradiation , electron microscope , ion implantation , crystallography , matrix (chemical analysis) , analytical chemistry (journal) , molecular physics , composite material , chemistry , optics , thermodynamics , oceanography , physics , organic chemistry , nuclear physics , geology , chromatography
An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas‐filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas‐filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix.