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Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures
Author(s) -
Benediktovitch A.,
Rinaldi F.,
Menzel S.,
Saito K.,
Ulyanenkova T.,
Baumbach T.,
Feranchuk I. D.,
Ulyanenkov A.
Publication year - 2011
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201184251
Subject(s) - reciprocal lattice , materials science , relaxation (psychology) , indium , scattering , condensed matter physics , lattice (music) , degree (music) , tilt (camera) , layer (electronics) , crystallography , optics , optoelectronics , chemistry , physics , nanotechnology , geometry , mathematics , psychology , social psychology , diffraction , acoustics
The series of samples is investigated to verify the validity of the scattering theory within the layers of different relaxation degree. The samples composed of In 0.06 Ga 0.94 As layer of different thicknesses on GaAs [001] substrates were grown using MBE technique. The symmetric and asymmetric reciprocal space maps (RSM) were measured and simulated for the samples with the fully coherent layer, in the vicinity of the critical thickness of relaxation, and with the fully relaxed layer. The crystallographic layer miscuts, indium concentrations, the relaxation degrees, and density of dislocations have been precisely evaluated.