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Threshold voltage of the EOSFET: Reference electrode and oxide–electrolyte interface
Author(s) -
Fromherz Peter
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127766
Subject(s) - electrolyte , polarization (electrochemistry) , electrode , oxide , materials science , threshold voltage , work function , mosfet , voltage , optoelectronics , chemistry , nanotechnology , transistor , layer (electronics) , electrical engineering , metallurgy , engineering
The threshold voltage of the EOSFET is derived in close analogy to the common MOSFET, addressing the role of the reference electrode and of the oxide–electrolyte interface. It is shown that the reference electrode is characterized by the work function of its redox system, and that the oxide–electrolyte interface contributes by a change of the electrical polarization when it is formed from the free surfaces. The threshold of the EOSFET can be obtained from the threshold of a homologous MOSFET, if the change of the interfacial polarization is known, e.g., from a molecular dynamics simulation. Vice versa, a measured difference of the thresholds provides information on the change of the interfacial polarization. In sensor applications, changes of the interfacial polarization as well as of the electrical double layer must be taken into account.