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Carrier‐transport studies of III‐nitride/Si 3 N 4 /Si isotype heterojunctions
Author(s) -
Kumar Mahesh,
Roul Basanta,
Bhat Thirumaleshwara N.,
Rajpalke Mohana K.,
Kalghatgi A. T.,
Krupanidhi S. B.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127721
Subject(s) - wurtzite crystal structure , heterojunction , materials science , molecular beam epitaxy , transmission electron microscopy , optoelectronics , nitride , epitaxy , silicon , diode , crystallography , layer (electronics) , nanotechnology , chemistry , zinc , metallurgy
GaN/Si 3 N 4 /n‐Si and InN/Si 3 N 4 /n‐Si heterojunctions (HJs) were fabricated using plasma‐assisted molecular beam epitaxy for a comparison study. Single‐crystalline wurtzite structures of GaN and InN epilayers were confirmed by high‐resolution X‐ray diffraction and thickness of ultrathin Si 3 N 4 layer was measured by transmission electron microscopy. n‐GaN/Si 3 N 4 /n‐Si HJs show diode‐like rectifying current–voltage ( I–V ) characteristic, while n‐InN/Si 3 N 4 /n‐Si HJs show symmetric nonlinear I–V behavior. The I–V characteristics of both HJs were discussed in terms of the band diagram of HJs and the carrier transport mechanism. The activation energies of carrier conduction were estimated to be ∼29 meV for GaN/Si 3 N 4 /Si and ∼95 meV for InN/Si 3 N 4 /Si HJs.