Premium
Iron segregation in silicon‐on‐insulator wafer with polysilicon interlayer
Author(s) -
YliKoski M.,
Haarahiltunen A.,
Hintsala J.,
Savin H.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127718
Subject(s) - monocrystalline silicon , getter , materials science , wafer , silicon , polycrystalline silicon , silicon on insulator , optoelectronics , precipitation , layer (electronics) , nanotechnology , thin film transistor , physics , meteorology
We have studied iron gettering from monocrystalline silicon device layer into polycrystalline silicon (polysilicon) interlayer in thick bonded silicon‐on‐insulator (SOI) wafers. The results show that the polysilicon interlayer acts as an efficient gettering layer for iron. The gettering takes place via both the segregation and precipitation although the dominant gettering mechanism is segregation at low contamination levels. The activation energy of the segregation coefficient between the monocrystalline silicon and the polysilicon interlayer was found to be E a = 1.9 ± 0.2 eV.