Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors | Zendy

Ng C. W. | Zendy; Wang H. | Zendy

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Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors

Author(s) -

Ng C. W.,

Wang H.

Publication year - 2012

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201127699

Subject(s) - materials science , heterojunction , optoelectronics , common emitter , bipolar junction transistor , heterojunction bipolar transistor , conduction band , discontinuity (linguistics) , enhanced data rates for gsm evolution , heterostructure emitter bipolar transistor , transistor , electron , voltage , electrical engineering , mathematical analysis , telecommunications , physics , mathematics , quantum mechanics , computer science , engineering

In this work, the temperature‐dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type‐I InAlAs/GaAsSb emitter–base junction interface and a type‐II GaAsSb/InP base–collector were studied. The experimental results reveal that electron injection at emitter–base junction could be affected by conduction barrier limited carrier transport. A conduction band edge discontinuity of 9.5 meV for InAlAs/GaAsSb heterojunction was experimentally estimated.

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