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Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors
Author(s) -
Ng C. W.,
Wang H.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127699
Subject(s) - materials science , heterojunction , optoelectronics , common emitter , bipolar junction transistor , heterojunction bipolar transistor , conduction band , discontinuity (linguistics) , enhanced data rates for gsm evolution , heterostructure emitter bipolar transistor , transistor , electron , voltage , electrical engineering , mathematical analysis , telecommunications , physics , mathematics , quantum mechanics , computer science , engineering
In this work, the temperature‐dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type‐I InAlAs/GaAsSb emitter–base junction interface and a type‐II GaAsSb/InP base–collector were studied. The experimental results reveal that electron injection at emitter–base junction could be affected by conduction barrier limited carrier transport. A conduction band edge discontinuity of 9.5 meV for InAlAs/GaAsSb heterojunction was experimentally estimated.