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Highly uniform and reliable resistance switching properties in bilayer WO x /NbO x RRAM devices
Author(s) -
Sadaf Sharif Md.,
Liu Xinjun,
Son Myungwoo,
Park Sangsu,
Choudhury Sakeb H.,
Cha Euijun,
Siddik Manzar,
Shin Jungho,
Hwang Hyunsang
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127659
Subject(s) - resistive random access memory , materials science , natural bond orbital , reset (finance) , bilayer , joule heating , optoelectronics , stack (abstract data type) , switching time , reliability (semiconductor) , voltage , electromigration , non volatile memory , electric field , electrical engineering , composite material , chemistry , power (physics) , computer science , thermodynamics , financial economics , engineering , density functional theory , biochemistry , quantum mechanics , programming language , physics , computational chemistry , economics , membrane
Memory performances, especially uniformity and reliability of resistance random access memory (RRAM) devices with W/NbO x /Pt structures were investigated. Scaling down the active device area ( ø = 250 nm) can significantly minimize extrinsic defects related to nonuniform switching and also demonstrate low‐voltage SET/RESET operations due to increased Joule heating. Electromigration of oxygen ions under the bipolar electric field, bilayer formation, and lightning‐rod effect localized at WO x /NbO x interface can explain the improved switching behavior in this novel stack. Excellent device characteristics such as lower switching voltage, fast switching speed (100 ns), high‐temperature retention (>10 4 s, 85 °C), stable cycling endurance (10 7 cycles), almost 100% device yield and excellent switching uniformity are obtained.