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Deep centers in a CuInGaSe 2 /CdS/ZnO:B solar cell
Author(s) -
Choi InHwan,
Choi ChulHwan,
Lee JooWon
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127596
Subject(s) - copper indium gallium selenide solar cells , heterojunction , materials science , optoelectronics , schottky barrier , electron beam induced current , deep level transient spectroscopy , schottky diode , solar cell , depletion region , diode , p–n junction , semiconductor , silicon
CuInGaSe 2 (CIGS)/CdS/ZnO:B heterojunction solar cells and CIGS/Al Schottky junction diodes were fabricated, and the defect centers were examined by capacitance–voltage ( C – V ) measurements and deep‐level transient spectroscopy (DLTS). The homogeneity of the junction in the CIGS heterojunction solar cell was examined by electron‐beam induced current (EBIC) measurements. The distribution of the defect concentrations in the CIGS absorber layer of the CIGS/CdS/ZnO:B heterojunction changed remarkably with depth. On the other hand, the defect distribution in the CIGS layer of the CIGS Schottky junction was quasi‐homogeneous. One electron and one hole trap were observed from CIGS Schottky junction, whereas one electron trap and two hole traps were found in the CIGS/CdS/ZnO:B heterojunction.