Premium
Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors
Author(s) -
Dun Shaobo,
Jiang Yang,
Li Jingqiang,
Fang Yulong,
Yin Jiayun,
Liu Bo,
Wang Jingjing,
Chen Hong,
Feng Zhihong,
Cai Shujun
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127553
Subject(s) - materials science , heterojunction , optoelectronics , raman spectroscopy , electric field , leakage (economics) , transistor , field effect transistor , relaxation (psychology) , spectroscopy , condensed matter physics , voltage , optics , electrical engineering , psychology , social psychology , physics , quantum mechanics , economics , macroeconomics , engineering
A new method to characterize the strain status in the electrical degradation of AlGaN/GaN heterojunction field‐effect transistors (HFETs) using micro‐Raman spectroscopy at a wavelength of 532 nm was proposed. This method was applied to the devices stressed under different dc biased configurations to find the direct evidence of strain relaxation due to inverse piezoelectric effect (IPE). It was observed that the strain relaxation in AlGaN barrier layers became more severe with the increment of the electric field applied externally, which would lead to the rise of the gate leakage current. The deterioration of the gate leakage current shows a time‐dependent feature.