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Properties of ultraviolet anti‐Stokes photoluminescence in ZnO single crystals
Author(s) -
Fujii Katsushi,
Goto Takenari,
Yao Takafumi
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127551
Subject(s) - photoluminescence , ultraviolet , excited state , materials science , photoluminescence excitation , excitation , optoelectronics , atomic physics , physics , quantum mechanics
Ultraviolet (UV) anti‐Stokes photoluminescence (ASPL) was observed in ZnO single crystals at low temperature. The ASPL spectrum was essentially the same as the normal photoluminescence (PL) spectrum under excitation in the band to band transition. By analogy to the ASPL of GaN, a two‐step two‐photon absorption process is suggested to occur in ZnO. The ratio of re‐excited electrons in the intermediate state is, however, smaller than that for GaN from the excitation intensity dependence of the ASPL. This difference is probably due to the carrier lifetime of the intermediate state for ZnO being shorter than that for GaN.