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GaN‐based Schottky barrier ultraviolet photodetector with a 5‐pair AlGaN–GaN intermediate layer
Author(s) -
Lee Kai Hsuan,
Chang Ping Chuan,
Chang Shoou Jinn,
Wu San Lein
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127545
Subject(s) - responsivity , materials science , optoelectronics , ultraviolet , photodetector , schottky barrier , dark current , schottky diode , noise equivalent power , layer (electronics) , diode , barrier layer , active layer , specific detectivity , noise (video) , nanotechnology , artificial intelligence , computer science , image (mathematics) , thin film transistor
Abstract A GaN‐based Schottky barrier diode (SBD) with a 5‐pair AlGaN–GaN intermediate layer for ultraviolet (UV) photodetector (PD) was fabricated and investigated. It was found that we could achieve a smaller dark leakage current and noise level by using the 5‐pair AlGaN–GaN intermediate layer. For our device biased at −5 V, the responsivity at 360 nm was found to be 0.26 A/W and the UV‐to‐visible rejection ratio was estimated to be 1.83 × 10 4 . At the same bias, it was found that minimum noise equivalent power and normalized detectivity of our device were 1.00 × 10 −9 W and 1.45 × 10 9 cm Hz 0.5 W −1 , respectively. This indicates a simple and effective way to fabricate high‐performance PDs for UV detection.