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Influence of film thickness on structural and optical properties of ZnS thin films obtained by SILAR method and analysis of Zn/ZnS/n‐GaAs/In sandwich structure
Author(s) -
Özakın Oğuzhan,
Güzeldir Betül,
Yıldırım M. Ali,
Sağlam Mustafa,
Ateş Aytunç
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127543
Subject(s) - materials science , band gap , refractive index , thin film , substrate (aquarium) , dielectric , optoelectronics , analytical chemistry (journal) , optics , nanotechnology , chemistry , oceanography , physics , chromatography , geology
ZnS thin films were deposited on glass substrates using SILAR method at room temperature and ambient pressure. The relationship between refractive index and energy bandgap was investigated. The film thickness effect on the structural, morphological and optical properties of ZnS thin films was investigated. The crystalline and surface properties of the films improved with increasing film thickness. The energy bandgap values changed from 3.87 to 3.58 eV with increasing film thickness. The refractive index ( n ), high frequency dielectric constant ( ε ∞ ) values were calculated by using the energy bandgap values as a function of the film thickness. Also, ZnS thin film was deposited directly on n‐GaAs substrate for obtaining the Zn/ZnS/n‐GaAs/In sandwich structure at room temperature. The sandwich structure demonstrated clearly rectifying behaviour by the current–voltage ( I – V ) curves at room temperature. From I – V characteristics n and Φ b values were calculated as 1.894 and 0.632 eV at room temperature, respectively.