Premium
Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer
Author(s) -
Jiang Tingting,
Yu Xuegong,
Gu Xin,
Yang Deren,
Rozgonyi George
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127536
Subject(s) - grain boundary , passivation , wafer , materials science , silicon , photovoltaics , hydrogen , optoelectronics , capacitance , voltage , nanotechnology , chemistry , electrical engineering , composite material , photovoltaic system , layer (electronics) , microstructure , engineering , organic chemistry , electrode
The effect of hydrogenation on the electrical property of a clean grain boundary (GB) in the p‐type direct silicon bonded (DSB) wafers has been investigated by current–voltage ( I – V ) and capacitance–voltage( C – V ) deconvolution. It is found that compared to the as‐bonded GB, the energy distribution of interface states at the GB subjected to hydrogenation become shallower, and the hole capture cross‐section can be reduced by about two orders of magnitude, while the density of GB states changes only slightly. Therefore, a significantly smaller potential barrier of GB could be obtained after hydrogenation. These results are interesting for us to understand the mechanism of hydrogen passivation of GBs in photovoltaics.