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Room temperature MBE deposition of Bi 2 Te 3 and Sb 2 Te 3 thin films with low charge carrier densities
Author(s) -
Peranio N.,
Winkler M.,
Aabdin Z.,
König J.,
Böttner H.,
Eibl O.
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127440
Subject(s) - thin film , annealing (glass) , materials science , stoichiometry , charge carrier density , analytical chemistry (journal) , crystallite , seebeck coefficient , charge carrier , condensed matter physics , chemistry , optoelectronics , doping , thermal conductivity , nanotechnology , metallurgy , composite material , physics , chromatography
Abstract Sb 2 Te 3 and Bi 2 Te 3 thin films were grown at room temperature on SiO 2 substrates using MBE and were subsequently annealed at 250 °C. The films were stoichiometric, polycrystalline, textured, and yielded strikingly low charge carrier densities of about 2.7 × 10 19 cm −3 . The in‐plane transport properties were measured at room temperature, the thermopower was 130 µV K −1 for Sb 2 Te 3 and −153 µV K −1 for Bi 2 Te 3 thin films. The small charge carrier densities are explained by a reduced antisite defect density due to the low temperatures to which the thin films were exposed during annealing.