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Field emission properties of gallium oxide micro‐ and nanostructures in the scanning electron microscope
Author(s) -
López Iñaki,
Nogales Emilio,
Hidalgo Pedro,
Méndez Bianchi,
Piqueras Javier
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127406
Subject(s) - field electron emission , nanowire , materials science , scanning electron microscope , field emission microscopy , work function , gallium , x ray photoelectron spectroscopy , doping , analytical chemistry (journal) , evaporation , electric field , nanotechnology , electron , optoelectronics , optics , diffraction , chemistry , nuclear magnetic resonance , composite material , physics , metallurgy , layer (electronics) , quantum mechanics , chromatography , thermodynamics
The field emission properties of gallium oxide nanowires grown by thermal evaporation–deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X‐ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga 2 O 3 . The results show improved field emission properties of Sn doped Ga 2 O 3 nanowires, with a lower threshold field (below 1.0 V/µm). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.