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Growth and characterization of self‐assembled low‐indium composition InGaN nanodots by alternate admittance of precursors
Author(s) -
Zhao Wei,
Wang Lai,
Wang Jiaxing,
Lv Wenbin,
Hao Zhibiao,
Luo Yi
Publication year - 2012
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201127368
Subject(s) - indium , trimethylindium , triethylgallium , photoluminescence , materials science , nanodot , admittance , optoelectronics , epitaxy , ultraviolet , indium antimonide , indium gallium nitride , analytical chemistry (journal) , metalorganic vapour phase epitaxy , inorganic chemistry , gallium nitride , chemistry , nanotechnology , electrical impedance , physics , layer (electronics) , quantum mechanics , chromatography
Low‐indium composition InGaN nanodots are grown on GaN/Al 2 O 3 by alternate admittance of triethylgallium (TEGa), trimethylindium (TMIn), and ammonia (NH 3 ) using metalorganic vapor phase epitaxy. Since the lattice mismatch between metal (Ga, In) and GaN is large during the admittance of group III precursors and the alternate admittance of precursors can enhance the surface diffusion of adatoms, it is believed that the growth mode of InGaN nanodots is the Volmer–Weber mode. The admittance time is optimized and injecting TMIn with NH 3 can increase indium composition. The ultraviolet photoluminescence spectra exhibit small temperature‐dependent redshift and a sensitive intensity change dependent on indium composition.